Invention Grant
- Patent Title: Integrated circuit and semiconductor memory device using the same
- Patent Title (中): 集成电路和半导体存储器件使用相同
-
Application No.: US13333622Application Date: 2011-12-21
-
Publication No.: US08769240B2Publication Date: 2014-07-01
- Inventor: Dae-Il Choi
- Applicant: Dae-Il Choi
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2011-0040802 20110429
- Main IPC: G06F12/02
- IPC: G06F12/02
Abstract:
An integrated circuit includes a random address generation unit configured to generate a first random address for a data randomizing operation, an address conversion unit configured to convert the first random address and generate a second random address, and a synchronization output unit configured to sequentially output the first and second random addresses in synchronization with a clock signal.
Public/Granted literature
- US20130031329A1 INTEGRATED CIRCUIT AND SEMICONDUCTOR MEMORY DEVICE USING THE SAME Public/Granted day:2013-01-31
Information query
