Invention Grant
US08769446B2 Method and device for increasing fin device density for unaligned fins
有权
用于增加未对准翅片翅片装置密度的方法和装置
- Patent Title: Method and device for increasing fin device density for unaligned fins
- Patent Title (中): 用于增加未对准翅片翅片装置密度的方法和装置
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Application No.: US13227809Application Date: 2011-09-08
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Publication No.: US08769446B2Publication Date: 2014-07-01
- Inventor: Chien-Hsun Wang , Chih-Sheng Chang , Yi-Tang Lin , Ming-Feng Shieh
- Applicant: Chien-Hsun Wang , Chih-Sheng Chang , Yi-Tang Lin , Ming-Feng Shieh
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman & Ham, LLP
- Main IPC: G06F17/50
- IPC: G06F17/50
Abstract:
A method for generating a layout for a device having FinFETs from a first layout for a device having planar transistors is disclosed. A plurality of elongate mandrels is defined in a plurality of active regions. Where adjacent active regions are partially-parallel and within a specified minimum spacing, connective elements are added to a portion of the space between the adjacent active regions to connect the mandrel ends from one active region to another active region.
Public/Granted literature
- US20120124528A1 METHOD AND DEVICE FOR INCREASING FIN DEVICE DENSITY FOR UNALIGNED FINS Public/Granted day:2012-05-17
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