Plasma processing apparatus

Invention Grant

US08771461B2 Plasma processing apparatus 有权

Title translation: 等离子体处理装置

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Patent Title: Plasma processing apparatus
Patent Title (中): 等离子体处理装置
Application No.: US12922520

Application Date: 2008-12-03
Publication No.: US08771461B2

Publication Date: 2014-07-08
Inventor: Toshihiro Hayami , Yasuyuki Hayashi
Applicant: Toshihiro Hayami , Yasuyuki Hayashi
Applicant Address: JP Tokyo
Assignee: SPP Technologies Co., Ltd.
Current Assignee: SPP Technologies Co., Ltd.
Current Assignee Address: JP Tokyo
Agency: Smith Patent Office
Priority: JP2008-065252 20080314
International Application: PCT/JP2008/071960 WO 20081203
International Announcement: WO2009/113213 WO 20090917
Main IPC: H01L21/306
IPC: H01L21/306 ; C23C16/00

Abstract:

The present invention relates to a plasma processing apparatus in which it is possible to efficiently perform maintenance of a processing chamber. A plasma processing apparatus has a processing chamber including a lower chamber and an upper chamber, a platen on which a silicon substrate is placed, a processing gas supply device, coils, high-frequency power supply unit for coil, an elevating board with a through hole provided to be vertically movable, an elevating mechanism for supporting and moving the elevating board, and a fixing mechanism for fixing the upper chamber. The fixing member is configured from a fixing board, first fixing bolts for connecting and fixing a top plate to the elevating board using the fixing board, second fixing bolts for fixing a flange portion of a holding member to an annular plate, and third fixing bolts for fixing the annular plate to a sidewall of the lower chamber.

Abstract(Chinese):

等离子体处理装置技术领域本发明涉及能够有效地进行处理室的维护的等离子体处理装置。一种等离子体处理装置具有包括下室和上室的处理室，放置有硅基板的压板，处理气体供给装置，线圈，线圈用高频电源单元，具有通孔的升降板提供为可垂直移动的孔，用于支撑和移动升降板的升降机构，以及用于固定上室的固定机构。固定构件由固定板构成，第一固定螺栓用于使用固定板将顶板连接并固定到升降板，用于将保持构件的凸缘部固定到环形板的第二固定螺栓和第三固定螺栓用于将环形板固定到下室的侧壁。

Public/Granted literature

US20110005684A1 PLASMA PROCESSING APPARATUS Public/Granted day:2011-01-13

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/306	......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/31；绝缘层的后处理入H01L21/3105）