A method of manufacturing an extreme ultraviolet (EUV) mask includes forming a first multi-layered thin film over a quartz substrate, forming a structure pattern over the first multi-layered thin film, and forming a second multi-layered thin film over the structure pattern and the first multi-layered thin film. The second multi-layered thin film is formed so that a periodicity of the second multi-layered thin film formed over the structure pattern is different from a periodicity of the second multi-layered thin film formed over the first multi-layered thin film.