Invention Grant
- Patent Title: Method of producing substrate for liquid ejection head
- Patent Title (中): 液体喷射头用基材的制造方法
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Application No.: US13433806Application Date: 2012-03-29
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Publication No.: US08771531B2Publication Date: 2014-07-08
- Inventor: Kenta Furusawa , Shuji Koyama , Hiroyuki Abo , Taichi Yonemoto
- Applicant: Kenta Furusawa , Shuji Koyama , Hiroyuki Abo , Taichi Yonemoto
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2011-093014 20110419
- Main IPC: B41J2/16
- IPC: B41J2/16

Abstract:
A substrate for a liquid ejection head, including: forming a sacrifice layer on a first surface of a silicon substrate in a region in which a liquid supply port is to open, the sacrifice layer containing aluminum which is selectively etched with respect to the silicon substrate; forming an etching mask on a second surface which is a rear surface of the first surface of the silicon substrate, the etching mask having an opening corresponding to the sacrifice layer; a first etching step of etching the silicon substrate by using the etching mask as a mask and by using a first etchant containing 8 mass % or more and less than 15 mass % of tetramethylammonium hydroxide; and after the first etching step, a second etching step of removing the sacrifice layer by using a second etchant containing 15 mass % or more and 25 mass % or less of tetramethylammonium hydroxide.
Public/Granted literature
- US20120267342A1 METHOD OF PRODUCING SUBSTRATE FOR LIQUID EJECTION HEAD Public/Granted day:2012-10-25
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