Invention Grant
- Patent Title: Plasma source design
- Patent Title (中): 等离子源设计
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Application No.: US12949661Application Date: 2010-11-18
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Publication No.: US08771538B2Publication Date: 2014-07-08
- Inventor: Dmitry Lubomirsky , Jang-Gyoo Yang , Matthew Miller , Jay Pinson , Kien Chuc
- Applicant: Dmitry Lubomirsky , Jang-Gyoo Yang , Matthew Miller , Jay Pinson , Kien Chuc
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: B44C1/22
- IPC: B44C1/22 ; H01J37/32

Abstract:
Embodiments of the present invention generally provide a plasma source apparatus, and method of using the same, that is able to generate radicals and/or gas ions in a plasma generation region that is symmetrically positioned around a magnetic core element by use of an electromagnetic energy source. In general, the orientation and shape of the plasma generation region and magnetic core allows for the effective and uniform coupling of the delivered electromagnetic energy to a gas disposed in the plasma generation region. In general, the improved characteristics of the plasma formed in the plasma generation region is able to improve deposition, etching and/or cleaning processes performed on a substrate or a portion of a processing chamber that is disposed downstream of the plasma generation region.
Public/Granted literature
- US20110114601A1 PLASMA SOURCE DESIGN Public/Granted day:2011-05-19
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