Invention Grant
US08771557B2 Indium oxide sintered compact, indium oxide transparent conductive film, and manufacturing method of indium oxide transparent conductive film 有权
氧化铟烧结体,氧化铟透明导电膜及氧化铟透明导电膜的制造方法

Indium oxide sintered compact, indium oxide transparent conductive film, and manufacturing method of indium oxide transparent conductive film
Abstract:
An indium oxide sintered compact containing zirconium as an additive, wherein the ratio of atomic concentration of zirconium to the sum of the atomic concentration of indium and the atomic concentration of zirconium is in the range of 0.5 to 4%, the relative density is 99.3% or higher, and the bulk resistance is 0.5 mΩ·cm or less. This invention aims to provide an indium oxide transparent conductive film of high transmittance in the visible light region and the infrared region, with low film resistivity, and in which the crystallization temperature can be controlled, as well as the manufacturing method thereof, and an oxide sintered compact for use in producing such transparent conductive film.
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