Invention Grant
- Patent Title: Indium oxide sintered compact, indium oxide transparent conductive film, and manufacturing method of indium oxide transparent conductive film
- Patent Title (中): 氧化铟烧结体,氧化铟透明导电膜及氧化铟透明导电膜的制造方法
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Application No.: US13318172Application Date: 2010-09-30
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Publication No.: US08771557B2Publication Date: 2014-07-08
- Inventor: Hideo Takami , Masakatsu Ikisawa
- Applicant: Hideo Takami , Masakatsu Ikisawa
- Applicant Address: JP Tokyo
- Assignee: JX Nippon Mining & Metals Corporation
- Current Assignee: JX Nippon Mining & Metals Corporation
- Current Assignee Address: JP Tokyo
- Agency: Howson & Howson LLP
- Priority: JP2009-232466 20091006
- International Application: PCT/JP2010/067019 WO 20100930
- International Announcement: WO2011/043235 WO 20110414
- Main IPC: H01B1/08
- IPC: H01B1/08 ; B05D5/12 ; C23C14/08

Abstract:
An indium oxide sintered compact containing zirconium as an additive, wherein the ratio of atomic concentration of zirconium to the sum of the atomic concentration of indium and the atomic concentration of zirconium is in the range of 0.5 to 4%, the relative density is 99.3% or higher, and the bulk resistance is 0.5 mΩ·cm or less. This invention aims to provide an indium oxide transparent conductive film of high transmittance in the visible light region and the infrared region, with low film resistivity, and in which the crystallization temperature can be controlled, as well as the manufacturing method thereof, and an oxide sintered compact for use in producing such transparent conductive film.
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