Invention Grant
US08771901B2 SOFC stack having a high temperature bonded ceramic interconnect and method for making same
有权
具有高温粘结陶瓷互连的SOFC堆叠及其制造方法
- Patent Title: SOFC stack having a high temperature bonded ceramic interconnect and method for making same
- Patent Title (中): 具有高温粘结陶瓷互连的SOFC堆叠及其制造方法
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Application No.: US11696624Application Date: 2007-04-04
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Publication No.: US08771901B2Publication Date: 2014-07-08
- Inventor: William J. Donahue , Oh-Hun Kwon , F. Michael Mahoney , John D. Pietras
- Applicant: William J. Donahue , Oh-Hun Kwon , F. Michael Mahoney , John D. Pietras
- Applicant Address: US MA Worcester
- Assignee: Saint-Gobain Ceramics & Plastics, Inc.
- Current Assignee: Saint-Gobain Ceramics & Plastics, Inc.
- Current Assignee Address: US MA Worcester
- Agency: Abel Law Group, LLP
- Agent Robert N. Young
- Main IPC: H01M8/00
- IPC: H01M8/00 ; H01M8/10 ; H01M8/24 ; H01M2/08 ; H01M2/14

Abstract:
The present disclosure is directed to an integrated SOFC stack including, a first cell having a cathode layer, an electrolyte layer overlying the cathode layer, and an anode layer overlying the electrolyte layer. The SOFC stack also includes a second cell having a cathode layer, an electrolyte layer overlying the cathode layer, and an anode overlying the electrolyte layer. The SOFC stack further includes a ceramic interconnect layer between the first cell and the second cell, the ceramic interconnect layer having a first high temperature bonding region along the interfacial region between the first cell and the ceramic interconnect layer. The ceramic interconnect layer also includes a second high temperature bonding region along the interfacial region between the second cell and the ceramic interconnect layer.
Public/Granted literature
- US20070237999A1 SOFC STACK HAVING A HIGH TEMPERATURE BONDED CERAMIC INTERCONNECT AND METHOD FOR MAKING SAME Public/Granted day:2007-10-11
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