Invention Grant
US08771906B2 Method and system for forming a pattern using charged particle beam lithography with multiple exposure passes which expose different surface area
有权
使用带有曝光不同表面积的多次曝光通道的带电粒子光刻法形成图案的方法和系统
- Patent Title: Method and system for forming a pattern using charged particle beam lithography with multiple exposure passes which expose different surface area
- Patent Title (中): 使用带有曝光不同表面积的多次曝光通道的带电粒子光刻法形成图案的方法和系统
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Application No.: US13947242Application Date: 2013-07-22
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Publication No.: US08771906B2Publication Date: 2014-07-08
- Inventor: Harold Robert Zable , Akira Fujimura
- Applicant: D2S, Inc.
- Applicant Address: US CA San Jose
- Assignee: D2S, Inc.
- Current Assignee: D2S, Inc.
- Current Assignee Address: US CA San Jose
- Agency: The Mueller Law Office, P.C.
- Main IPC: G03F1/20
- IPC: G03F1/20 ; G03F1/36
Abstract:
In the field of semiconductor production using charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, in which the union of shots from one of a plurality of exposure passes is different than the union of shots from a different exposure pass. Methods for manufacturing a reticle and manufacturing an integrated circuit are also disclosed, in which the union of shots from one of a plurality of charged particle beam exposure passes is different than the union of shots from a different exposure pass.
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