Invention Grant
US08771917B2 Monomers, polymers, photoresist compositions and methods of forming photolithographic patterns
有权
单体，聚合物，光致抗蚀剂组合物和形成光刻图案的方法
- Patent Title: Monomers, polymers, photoresist compositions and methods of forming photolithographic patterns
- Patent Title (中): 单体，聚合物，光致抗蚀剂组合物和形成光刻图案的方法
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Application No.: US13341931Application Date: 2011-12-31
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Publication No.: US08771917B2Publication Date: 2014-07-08
- Inventor: Matthias S. Ober , Young Cheol Bae , Yi Liu , Seung-Hyun Lee , Jong Keun Park
- Applicant: Matthias S. Ober , Young Cheol Bae , Yi Liu , Seung-Hyun Lee , Jong Keun Park
- Applicant Address: US MA Marlborough US MI Midland
- Assignee: Rohm and Haas Electronics Materials LLC,Dow Global Technologies LLC
- Current Assignee: Rohm and Haas Electronics Materials LLC,Dow Global Technologies LLC
- Current Assignee Address: US MA Marlborough US MI Midland
- Agent Jonathan D. Baskin
- Main IPC: G03F7/004
- IPC: G03F7/004 ; C08F24/00 ; G03F7/039 ; G06F7/38
Abstract:
Provided are (meth)acrylate monomers containing acetal moieties, polymers containing a unit formed from such a monomer and photoresist compositions containing such a polymer. The monomers, polymers and photoresist compositions are useful in forming photolithographic patterns. Also provided are substrates coated with the photoresist compositions, methods of forming photolithographic patterns and electronic devices. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.
Public/Granted literature
- US20130011783A1 MONOMERS, POLYMERS, PHOTORESIST COMPOSITIONS AND METHODS OF FORMING PHOTOLITHOGRAPHIC PATTERNS Public/Granted day:2013-01-10
Information query
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