A method of forming contacts on a surface emitter of a silicon solar cell is provided. In the method an n-type diffusion of a surface is performed to form a doped emitter surface layer that has a sheet resistance of 10-40 Ω/□. The emitter surface layer is then etched back to increase the sheet resistance of the emitter surface layer. Finally the surface is selectively plated.A method of fabrication of a silicon solar cell includes performing a front surface emitter diffusion of n-type dopant and then performing a dielectric deposition on the front surface by PECVD. The dielectric deposition comprises: a. growth of a thin silicon oxide; b. PECVD deposition of silicon nitride to achieve a silicon nitride. The silicon is then annealed to drive hydrogen from the silicon nitride layer into the silicon to passivate the silicon.