Invention Grant
US08772076B2 Back contact diffusion barrier layers for group ibiiiavia photovoltaic cells
失效
用于组ibiiiavia光伏电池的背面接触扩散阻挡层
- Patent Title: Back contact diffusion barrier layers for group ibiiiavia photovoltaic cells
- Patent Title (中): 用于组ibiiiavia光伏电池的背面接触扩散阻挡层
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Application No.: US12875669Application Date: 2010-09-03
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Publication No.: US08772076B2Publication Date: 2014-07-08
- Inventor: Mustafa Pinarbasi , James Freitag , Jorge Vasquez
- Applicant: Mustafa Pinarbasi , James Freitag , Jorge Vasquez
- Applicant Address: US CA San Jose
- Assignee: Solopower Systems, Inc.
- Current Assignee: Solopower Systems, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: H01L31/18
- IPC: H01L31/18
Abstract:
The present invention provides for new ohmic contact materials and diffusion barriers for Group IBIIIAVIA based solar cell structures, which eliminate two way diffusion while preserving the efficient ohmic contacts between the substrate and the absorber layers.
Public/Granted literature
- US20120055543A1 BACK CONTACT DIFFUSION BARRIER LAYERS FOR GROUP IBIIIAVIA PHOTOVOLTAIC CELLS Public/Granted day:2012-03-08
Information query
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