Provided are a method of forming a contact and a method of manufacturing a phase change memory device using the same. The method of forming a contact includes forming on a substrate an insulating layer pattern having first sidewalls extending in a first direction and second sidewalls extending in a second direction perpendicular to the first direction and which together delimit contact holes, forming semiconductor patterns in lower parts of the contact holes, forming isolation spacers on the semiconductor pattern and side surfaces of the first sidewalls to expose portions of the semiconductor patterns, and etching the exposed portions of the semiconductor patterns using the isolation spacers as a mask to divide the semiconductor patterns into a plurality of finer semiconductor patterns.