Invention Grant
- Patent Title: Semiconductor device manufacturing method using laser irradiation and dicing saw and semiconductor device thereof
- Patent Title (中): 使用激光照射和切割锯的半导体器件制造方法及其半导体器件
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Application No.: US13310170Application Date: 2011-12-02
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Publication No.: US08772135B2Publication Date: 2014-07-08
- Inventor: Yoshiyuki Abe , Chuichi Miyazaki , Hideo Mutou , Tomoko Higashino
- Applicant: Yoshiyuki Abe , Chuichi Miyazaki , Hideo Mutou , Tomoko Higashino
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Mattingly & Malur, PC
- Priority: WOPCT/JP2005/020615 20051110
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
To divide a semiconductor wafer by stealth dicing, a test pad in a cutting region and an alignment target are collectively arranged along one side in a width direction of the cutting region, and a laser beam for forming a modified region is irradiated to a position away in plane from the test pad and the alignment target Am. In this manner, defects in cutting shape in a cutting process of a semiconductor wafer using stealth dicing can be reduced or prevented.
Public/Granted literature
- US20120077332A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE Public/Granted day:2012-03-29
Information query
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