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US08772135B2 Semiconductor device manufacturing method using laser irradiation and dicing saw and semiconductor device thereof 有权
使用激光照射和切割锯的半导体器件制造方法及其半导体器件

Semiconductor device manufacturing method using laser irradiation and dicing saw and semiconductor device thereof
Abstract:
To divide a semiconductor wafer by stealth dicing, a test pad in a cutting region and an alignment target are collectively arranged along one side in a width direction of the cutting region, and a laser beam for forming a modified region is irradiated to a position away in plane from the test pad and the alignment target Am. In this manner, defects in cutting shape in a cutting process of a semiconductor wafer using stealth dicing can be reduced or prevented.
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