Invention Grant
US08772149B2 FinFET structure and method to adjust threshold voltage in a FinFET structure
有权
FinFET结构和调整FinFET结构中阈值电压的方法
- Patent Title: FinFET structure and method to adjust threshold voltage in a FinFET structure
- Patent Title (中): FinFET结构和调整FinFET结构中阈值电压的方法
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Application No.: US13276395Application Date: 2011-10-19
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Publication No.: US08772149B2Publication Date: 2014-07-08
- Inventor: Eduard A. Cartier , Brian J. Greene , Dechao Guo , Gan Wang , Yanfeng Wang , Keith Kwong Hon Wong
- Applicant: Eduard A. Cartier , Brian J. Greene , Dechao Guo , Gan Wang , Yanfeng Wang , Keith Kwong Hon Wong
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Roberts Mlotkowski Safran & Cole, P.C.
- Agent Joe Abate
- Main IPC: H01L21/3205
- IPC: H01L21/3205 ; H01L21/4763
Abstract:
FinFET structures and methods of manufacturing the FinFET structures are disclosed. The method includes performing an oxygen anneal process on a gate stack of a FinFET structure to induce Vt shift. The oxygen anneal process is performed after sidewall pull down and post silicide.
Public/Granted literature
- US20130099313A1 FINFET STRUCTURE AND METHOD TO ADJUST THRESHOLD VOLTAGE IN A FINFET STRUCTURE Public/Granted day:2013-04-25
Information query
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