Invention Grant
- Patent Title: Semiconductor device with air gap therein and manufacturing method thereof
- Patent Title (中): 具有气隙的半导体器件及其制造方法
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Application No.: US13423081Application Date: 2012-03-16
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Publication No.: US08772153B2Publication Date: 2014-07-08
- Inventor: Takashi Furuhashi , Miyoko Shimada , Ichiro Mizushima , Shinichi Nakao
- Applicant: Takashi Furuhashi , Miyoko Shimada , Ichiro Mizushima , Shinichi Nakao
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2011-158282 20110719
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L21/31 ; H01L23/52 ; H01L21/76
Abstract:
In accordance with an embodiment, a semiconductor device includes a substrate, a line-and-space structure, a first film and a second film. The line-and-space structure includes line patterns arranged on the substrate parallel to one another at a predetermined distance. The first film is formed on side surfaces and bottom surfaces of the line patterns by an insulating film material. The second film is formed on the line-and-space structure across a space between the line patterns by a material showing low wettability to the first film. Space between the line patterns includes an air gap in which at least a bottom surface of the first film is totally exposed.
Public/Granted literature
- US20130020706A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2013-01-24
Information query
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