Invention Grant
- Patent Title: Enhanced stripping of implanted resists
- Patent Title (中): 植入抗蚀剂的增强剥离
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Application No.: US12981073Application Date: 2010-12-29
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Publication No.: US08772170B2Publication Date: 2014-07-08
- Inventor: Srini Raghavan , Rajkumar Govindarajan , Manish Keswani
- Applicant: Srini Raghavan , Rajkumar Govindarajan , Manish Keswani
- Applicant Address: US AZ Tucson
- Assignee: Arizona Board of Regents on Behalf of the University of Arizona
- Current Assignee: Arizona Board of Regents on Behalf of the University of Arizona
- Current Assignee Address: US AZ Tucson
- Agency: Saliwanchik, Lloyd & Eisenschenk
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
A benign all-wet process for stripping photoresist after an implantation process performed to fabricate a device is provided. A method of stripping implanted resist includes a first step of disrupting a crust formed on the surface of the resist during the implantation process and then removing the underlying resist. In accordance with embodiments of the invention, a catalyzed hydrogen peroxide (CHP) chemical system is used to disrupt the crust and allow for low temperature (
Public/Granted literature
- US20120052687A1 ENHANCED STRIPPING OF IMPLANTED RESISTS Public/Granted day:2012-03-01
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