Invention Grant
US08772177B2 Semiconductor wafer and method of producing the same 有权
半导体晶片及其制造方法

  • Patent Title: Semiconductor wafer and method of producing the same
  • Patent Title (中): 半导体晶片及其制造方法
  • Application No.: US13514691
    Application Date: 2010-12-13
  • Publication No.: US08772177B2
    Publication Date: 2014-07-08
  • Inventor: Sumihisa Masuda
  • Applicant: Sumihisa Masuda
  • Applicant Address: JP Tokyo
  • Assignee: Sumco Corporation
  • Current Assignee: Sumco Corporation
  • Current Assignee Address: JP Tokyo
  • Agency: Pepper Hamilton LLP
  • Agent Thomas J. Engellenner; Reza Mollaaghababa
  • Priority: JP2009-291912 20091224
  • International Application: PCT/JP2010/007237 WO 20101213
  • International Announcement: WO2011/077661 WO 20110630
  • Main IPC: H01L21/304
  • IPC: H01L21/304 H01L21/02
Semiconductor wafer and method of producing the same
Abstract:
A wafer surface of a semiconductor wafer to be used as a device active region is mirror-polished, and an outer peripheral portion of the mirror-polished wafer surface is further polished, thereby forming an edge roll-off region between the device active region of the wafer surface and a beveled portion formed at the wafer edge. The edge roll-off region has a specific roll-off shape corresponding to an edge roll-off of the oxide film to be formed in a device fabrication process. Thus, a semiconductor wafer can be provided in which reduction in the thickness of an oxide film on the outer peripheral portion of the wafer in a CMP process can be prevented while maintaining high flatness of the wafer surface.
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