Invention Grant
- Patent Title: Semiconductor wafer and method of producing the same
- Patent Title (中): 半导体晶片及其制造方法
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Application No.: US13514691Application Date: 2010-12-13
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Publication No.: US08772177B2Publication Date: 2014-07-08
- Inventor: Sumihisa Masuda
- Applicant: Sumihisa Masuda
- Applicant Address: JP Tokyo
- Assignee: Sumco Corporation
- Current Assignee: Sumco Corporation
- Current Assignee Address: JP Tokyo
- Agency: Pepper Hamilton LLP
- Agent Thomas J. Engellenner; Reza Mollaaghababa
- Priority: JP2009-291912 20091224
- International Application: PCT/JP2010/007237 WO 20101213
- International Announcement: WO2011/077661 WO 20110630
- Main IPC: H01L21/304
- IPC: H01L21/304 ; H01L21/02

Abstract:
A wafer surface of a semiconductor wafer to be used as a device active region is mirror-polished, and an outer peripheral portion of the mirror-polished wafer surface is further polished, thereby forming an edge roll-off region between the device active region of the wafer surface and a beveled portion formed at the wafer edge. The edge roll-off region has a specific roll-off shape corresponding to an edge roll-off of the oxide film to be formed in a device fabrication process. Thus, a semiconductor wafer can be provided in which reduction in the thickness of an oxide film on the outer peripheral portion of the wafer in a CMP process can be prevented while maintaining high flatness of the wafer surface.
Public/Granted literature
- US20120248578A1 SEMICONDUCTOR WAFER AND METHOD OF PRODUCING THE SAME Public/Granted day:2012-10-04
Information query
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