Invention Grant
US08772181B2 Method for producing graphene, graphene produced on substrate, and graphene on substrate
有权
用于生产石墨烯的方法,在基底上产生的石墨烯和在基底上的石墨烯
- Patent Title: Method for producing graphene, graphene produced on substrate, and graphene on substrate
- Patent Title (中): 用于生产石墨烯的方法,在基底上产生的石墨烯和在基底上的石墨烯
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Application No.: US14001171Application Date: 2012-02-27
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Publication No.: US08772181B2Publication Date: 2014-07-08
- Inventor: Suguru Noda , Soichiro Takano
- Applicant: Suguru Noda , Soichiro Takano
- Applicant Address: JP Saitama
- Assignee: Japan Science and Technology Agency
- Current Assignee: Japan Science and Technology Agency
- Current Assignee Address: JP Saitama
- Agency: Enshan Hong VLP Law Group LLP
- Priority: JP2011-042781 20110228
- International Application: PCT/JP2012/054810 WO 20120227
- International Announcement: WO2012/118023 WO 20120907
- Main IPC: H01L21/469
- IPC: H01L21/469 ; H01L29/08

Abstract:
A production method for producing graphene on a substrate, and the like are provided. According to the method, in a forming step heating is conducted to a solid solution temperature at which a solid solution of carbon dissolved in a metal is able to be formed, and a solid solution layer (505) composed of the solid solution on a substrate (103) is formed; and in a removing step graphene (102) is grown on the substrate (103) by removing the metal from the solid solution layer (505) while maintaining the heating to the solid solution temperature. As a solvent for dissolving carbon a metal composed of a single element as well as various alloys are applicable. The graphene (102) touches directly the substrate (103), by removing the metal from the solid solution layer (505) by supplying an etching gas.
Public/Granted literature
- US20130341792A1 METHOD FOR PRODUCING GRAPHENE, GRAPHENE PRODUCED ON SUBSTRATE, AND GRAPHENE ON SUBSTRATE Public/Granted day:2013-12-26
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