Invention Grant
US08772696B2 Solid-state imaging device having an amplification transistor shared by pixels of a cell and a plurality of reset transistors for resetting read out signals from the pixels
失效
具有由单元的像素共享的放大晶体管和多个复位晶体管的固态成像器件，用于复位来自像素的读出信号
- Patent Title: Solid-state imaging device having an amplification transistor shared by pixels of a cell and a plurality of reset transistors for resetting read out signals from the pixels
- Patent Title (中): 具有由单元的像素共享的放大晶体管和多个复位晶体管的固态成像器件，用于复位来自像素的读出信号
-
Application No.: US13402269Application Date: 2012-02-22
-
Publication No.: US08772696B2Publication Date: 2014-07-08
- Inventor: Maki Sato
- Applicant: Maki Sato
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2011-049857 20110308
- Main IPC: H01L27/00
- IPC: H01L27/00
Abstract:
While a drain power source of a reset transistor and a drain power source of an amplifying transistor are separated, the load of drain power source can be reduced by sharing a drain diffusion layer of the reset transistor and a drain diffusion layer of the amplifying transistor and a pixel amp transistor by adjacent cells in sharing pixel units. Further, it is possible to perform layout setting for the floating diffusions such that parasitic capacitances between the floating diffusions are equal to each other. It is possible to prevent step-like noise from occurring among the pixels while improving sensitivity.
Public/Granted literature
- US20120228474A1 SOLID-STATE IMAGING DEVICE Public/Granted day:2012-09-13
Information query
IPC分类:
