Invention Grant
- Patent Title: Analysis apparatus and analysis method
- Patent Title (中): 分析仪器及分析方法
-
Application No.: US13863698Application Date: 2013-04-16
-
Publication No.: US08772712B2Publication Date: 2014-07-08
- Inventor: Hajime Kimura , Shunsuke Kiyomura
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2012-099032 20120424
- Main IPC: H01J49/40
- IPC: H01J49/40 ; H01J49/42 ; H01J49/26

Abstract:
A compound contained in a sample is analyzed more accurately. Provided is an analysis method using TOF-SIMS in which first spectral data is obtained by irradiating the sample with a first primary ion, second spectral data is obtained by irradiating the sample with a second primary ion, and a surface of the sample is etched by an ion and then the surface of the sample is irradiated with the first primary ion or the second primary ion. The first primary ion is more likely to break a molecular structure of a molecule contained in the sample than the second primary ion.
Public/Granted literature
- US20130277549A1 ANALYSIS APPARATUS AND ANALYSIS METHOD Public/Granted day:2013-10-24
Information query