Invention Grant
- Patent Title: Radiation detector having a bandgap engineered absorber
- Patent Title (中): 具有带隙工程吸收体的辐射检测器
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Application No.: US12853174Application Date: 2010-08-09
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Publication No.: US08772717B2Publication Date: 2014-07-08
- Inventor: Pradip Mitra , Jeffrey D. Beck , Mark R. Skokan
- Applicant: Pradip Mitra , Jeffrey D. Beck , Mark R. Skokan
- Applicant Address: US FL Melbourne
- Assignee: DRS RSTA, Inc.
- Current Assignee: DRS RSTA, Inc.
- Current Assignee Address: US FL Melbourne
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: G01J5/00
- IPC: G01J5/00

Abstract:
A radiation detector is provided that includes a photodiode having a radiation absorber with a graded multilayer structure. Each layer of the absorber is formed from a semiconductor material, such as HgCdTe. A first of the layers is formed to have a first predetermined wavelength cutoff. A second of the layers is disposed over the first layer and beneath the first surface of the absorber through which radiation is received. The second layer has a graded composition structure of the semiconductor material such that the wavelength cutoff of the second layer varies from a second predetermined wavelength cutoff to the first predetermined wavelength cutoff such that the second layer has a progressively smaller bandgap than the first bandgap of the first layer. The graded multilayer radiation absorber structure enables carriers to flow toward a conductor that is used for measuring the radiation being sensed by the radiation absorber.
Public/Granted literature
- US20110031401A1 RADIATION DETECTOR HAVING A BANDGAP ENGINEERED ABSORBER Public/Granted day:2011-02-10
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