Invention Grant
US08772749B2 Bottom electrodes for use with metal oxide resistivity switching layers
有权
用于金属氧化物电阻率开关层的底电极
- Patent Title: Bottom electrodes for use with metal oxide resistivity switching layers
- Patent Title (中): 用于金属氧化物电阻率开关层的底电极
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Application No.: US13047020Application Date: 2011-03-14
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Publication No.: US08772749B2Publication Date: 2014-07-08
- Inventor: Deepak Chandra Sekar , Franz Kreupl , Raghuveer S. Makala
- Applicant: Deepak Chandra Sekar , Franz Kreupl , Raghuveer S. Makala
- Applicant Address: US CA Milpitas
- Assignee: SanDisk 3D LLC
- Current Assignee: SanDisk 3D LLC
- Current Assignee Address: US CA Milpitas
- Agency: Vierra Magen Marcus LLP
- Main IPC: H01L47/00
- IPC: H01L47/00 ; H01L45/00
Abstract:
In a first aspect, a metal-insulator-metal (MIM) stack is provided that includes (1) a first conductive layer comprising a silicon-germanium (SiGe) alloy; (2) a resistivity-switching layer comprising a metal oxide layer formed above the first conductive layer; and (3) a second conductive layer formed above the resistivity-switching layer. A memory cell may be formed from the MIM stack. Numerous other aspects are provided.
Public/Granted literature
- US20110227020A1 BOTTOM ELECTRODES FOR USE WITH METAL OXIDE RESISTIVITY SWITCHING LAYERS Public/Granted day:2011-09-22
Information query
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