Invention Grant
- Patent Title: Nitride semiconductor light-emitting element, nitride semiconductor light-emitting device, and method of manufacturing nitride semiconductor light-emitting element
- Patent Title (中): 氮化物半导体发光元件，氮化物半导体发光元件以及氮化物半导体发光元件的制造方法
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Application No.: US13591959Application Date: 2012-08-22
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Publication No.: US08772790B2Publication Date: 2014-07-08
- Inventor: Yufeng Weng
- Applicant: Yufeng Weng
- Applicant Address: JP Osaka-shi
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka-shi
- Agency: Morrison & Foerster LLP
- Priority: JP2011-181767 20110823
- Main IPC: H01L27/14
- IPC: H01L27/14
Abstract:
A nitride semiconductor light-emitting device includes a nitride semiconductor light-emitting element, a package substrate and an optically transparent resin sealing portion. The nitride semiconductor light-emitting element includes a substrate, a nitride semiconductor multilayer portion having a light-emitting layer and a protective layer. The nitride semiconductor multilayer portion is provided on the substrate. The protective layer is provided on an upper portion of the nitride semiconductor multilayer portion. The resin sealing portion seals the nitride semiconductor light-emitting element that is mounted on the package substrate. An air gap layer is formed in at least one of an area between the substrate and the light-emitting layer in the nitride semiconductor light-emitting element, an area between the light-emitting layer and the protective layer in the nitride semiconductor light-emitting element and an area in the package substrate.
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