Invention Grant
- Patent Title: Semiconductor light emitting element and manufacturing method thereof
- Patent Title (中): 半导体发光元件及其制造方法
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Application No.: US13426141Application Date: 2012-03-21
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Publication No.: US08772808B2Publication Date: 2014-07-08
- Inventor: Yasuyuki Shibata , Ji-Hao Liang , Jiro Higashino
- Applicant: Yasuyuki Shibata , Ji-Hao Liang , Jiro Higashino
- Applicant Address: JP Tokyo
- Assignee: Stanley Electric Co., Ltd.
- Current Assignee: Stanley Electric Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Holtz Holtz Goodman & Chick PC
- Priority: JP2011-062099 20110322
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
A manufacturing method of a semiconductor light emitting element, includes forming sacrifice portions within the width of street portions in a semiconductor laminated body, and performing wet etching to remove the sacrifice portions together with their neighboring portions, thereby removing etching residuals in the streets.
Public/Granted literature
- US20120241805A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT AND MANUFACTURING METHOD THEREOF Public/Granted day:2012-09-27
Information query
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