Invention Grant
- Patent Title: Semiconductor light emitting device and method for manufacturing the same
- Patent Title (中): 半导体发光器件及其制造方法
-
Application No.: US13601487Application Date: 2012-08-31
-
Publication No.: US08772810B2Publication Date: 2014-07-08
- Inventor: Yoshiaki Sugizaki , Akihiro Kojima , Hideto Furuyama , Yosuke Akimoto
- Applicant: Yoshiaki Sugizaki , Akihiro Kojima , Hideto Furuyama , Yosuke Akimoto
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Patterson & Sheridan, LLP
- Priority: JP2012-069504 20120326
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L21/00
Abstract:
According to one embodiment, a semiconductor light emitting device includes: a semiconductor layer including a first face, a second face, a side face, and a light emitting layer; a p-side electrode provided on the second face; an n-side electrode provided on the side face; a first p-side metal layer provided on the p-side electrode; a first n-side metal layer provided on the periphery of the n-side electrode; a first insulating layer provided on a face on the second face side in the first n-side metal layer; a second p-side metal layer connected with the first p-side metal layer on the first p-side metal layer, and provided, extending from on the first p-side metal layer to on the first insulating layer; and a second n-side metal layer provided on a face on the second face side in the first n-side metal layer in a peripheral region of the semiconductor layer.
Public/Granted literature
- US20130248904A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2013-09-26
Information query
IPC分类:
