Invention Grant
- Patent Title: Light-emitting device and manufacturing method thereof
- Patent Title (中): 发光元件及其制造方法
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Application No.: US13430974Application Date: 2012-03-27
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Publication No.: US08772820B2Publication Date: 2014-07-08
- Inventor: Kensuke Yoshizumi , Koji Ono
- Applicant: Kensuke Yoshizumi , Koji Ono
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2011-075866 20110330
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
A highly reliable light-emitting device, a light-emitting device which can be formed without using a metal mask, or a light-emitting device in which a voltage drop due to the resistance of an upper electrode layer is suppressed is provided. When an EL film is formed over a conductive connection electrode layer having an uneven shape, a surface of the conductive connection electrode layer cannot be fully covered. Subsequently, a conductive film to be an upper electrode layer of an EL element is formed thereover; thus, a region in contact with the conductive connection electrode layer is formed. Further, a structure is provided in a position on a counter substrate, which overlaps with the conductive connection electrode layer, and then substrates are bonded to each other so that the structure is physically in contact with the upper electrode layer over the conductive connection electrode layer.
Public/Granted literature
- US20120248489A1 Light-Emitting Device and Manufacturing Method Thereof Public/Granted day:2012-10-04
Information query
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