Invention Grant
- Patent Title: Trench poly ESD formation for trench MOS and SGT
- Patent Title (中): 沟槽MOS和SGT的沟槽聚合物ESD形成
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Application No.: US13911871Application Date: 2013-06-06
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Publication No.: US08772828B2Publication Date: 2014-07-08
- Inventor: Hong Chang , John Chen
- Applicant: Hong Chang , John Chen
- Applicant Address: US CA Sunnyvale
- Assignee: Alpha and Omega Semiconductor Incorporated
- Current Assignee: Alpha and Omega Semiconductor Incorporated
- Current Assignee Address: US CA Sunnyvale
- Agency: JDI Patent
- Agent Joshua D. Isenberg
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
A semiconductor device includes a semiconductor material disposed in a trench with polysilicon lining at least the bottom of the trench. The semiconductor material includes differently doped regions configured as a PNP or NPN structure formed in the trench with differently doped regions located side by side across a width of the trench. It is emphasized that this abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
Public/Granted literature
- US20130299872A1 TRENCH POLY ESD FORMATION FOR TRENCH MOS AND SGT Public/Granted day:2013-11-14
Information query
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