Invention Grant
- Patent Title: III-nitride growth method on silicon substrate
- Patent Title (中): 硅衬底上的III族氮化物生长方法
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Application No.: US13290534Application Date: 2011-11-07
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Publication No.: US08772831B2Publication Date: 2014-07-08
- Inventor: Chi-Ming Chen , Po-Chun Liu , Hung-Ta Lin , Chin-Cheng Chang , Chung-Yi Yu , Chia-Shiung Tsai , Ho-Yung David Hwang
- Applicant: Chi-Ming Chen , Po-Chun Liu , Hung-Ta Lin , Chin-Cheng Chang , Chung-Yi Yu , Chia-Shiung Tsai , Ho-Yung David Hwang
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman & Ham, LLP
- Main IPC: H01L29/267
- IPC: H01L29/267 ; H01L29/778
Abstract:
A circuit structure includes a substrate and a patterned dielectric layer over the substrate. The patterned dielectric layer includes a plurality of vias; and a number of group-III group-V (III-V) compound semiconductor layer. The III-V compound semiconductor layers include a first layer in the vias, a second layer over the first layer and the dielectric layer, and a bulk layer over the second layer.
Public/Granted literature
- US20130112939A1 NEW III-NITRIDE GROWTH METHOD ON SILICON SUBSTRATE Public/Granted day:2013-05-09
Information query
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