Invention Grant
US08772846B2 Magnetic tunneling junction devices, memories, memory systems, and electronic devices
有权
磁隧道结设备，存储器，存储器系统和电子设备
- Patent Title: Magnetic tunneling junction devices, memories, memory systems, and electronic devices
- Patent Title (中): 磁隧道结设备，存储器，存储器系统和电子设备
-
Application No.: US13398640Application Date: 2012-02-16
-
Publication No.: US08772846B2Publication Date: 2014-07-08
- Inventor: Jeong Heon Park , Woo Chang Lim , Sechung Oh , Young Hyun Kim , Sang Hwan Park , Jang Eun Lee
- Applicant: Jeong Heon Park , Woo Chang Lim , Sechung Oh , Young Hyun Kim , Sang Hwan Park , Jang Eun Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2011-0079627 20110810
- Main IPC: H01L21/14
- IPC: H01L21/14
Abstract:
Provided is a magnetic tunneling junction device including a first structure including a magnetic layer; a second structure including at least two extrinsic perpendicular magnetization structures, each including a magnetic layer and; a perpendicular magnetization inducing layer on the magnetic layer; and a tunnel barrier between the first and second structures.
Public/Granted literature
- US20130042081A1 MAGNETIC TUNNELING JUNCTION DEVICES, MEMORIES, MEMORY SYSTEMS, AND ELECTRONIC DEVICES Public/Granted day:2013-02-14
Information query
IPC分类:
