Invention Grant
US08772851B2 Dielectrics containing at least one of a refractory metal or a non-refractory metal
有权
包含难熔金属或非难熔金属中的至少一种的介电体
- Patent Title: Dielectrics containing at least one of a refractory metal or a non-refractory metal
- Patent Title (中): 包含难熔金属或非难熔金属中的至少一种的介电体
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Application No.: US14052465Application Date: 2013-10-11
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Publication No.: US08772851B2Publication Date: 2014-07-08
- Inventor: Leonard Forbes , Kie Y. Ahn , Arup Bhattacharyya
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: H01L27/108
- IPC: H01L27/108
Abstract:
Electronic apparatus and methods of forming the electronic apparatus may include one or more insulator layers having a refractory metal and a non-refractory metal for use in a variety of electronic systems and devices. Embodiments can include electronic apparatus and methods of forming the electronic apparatus having a tantalum aluminum oxynitride film. The tantalum aluminum oxynitride film may be structured as one or more monolayers. The tantalum aluminum oxynitride film may be formed using atomic layer deposition. Metal electrodes may be disposed on a dielectric containing a tantalum aluminum oxynitride film.
Public/Granted literature
- US20140035101A1 DIELECTRICS CONTAINING AT LEAST ONE OF A REFRACTORY METAL OR A NON-REFRACTORY METAL Public/Granted day:2014-02-06
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