Invention Grant
- Patent Title: Vertical memory devices and methods of manufacturing the same
- Patent Title (中): 垂直存储器件及其制造方法
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Application No.: US13221380Application Date: 2011-08-30
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Publication No.: US08772857B2Publication Date: 2014-07-08
- Inventor: Byeong-In Choe , Jae-Hoon Jang , Sun-Il Shim , Han-Soo Kim , Jin-Man Han
- Applicant: Byeong-In Choe , Jae-Hoon Jang , Sun-Il Shim , Han-Soo Kim , Jin-Man Han
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2010-0102715 20101021
- Main IPC: H01L29/788
- IPC: H01L29/788
Abstract:
A vertical memory device includes a channel, a ground selection line (GSL), word lines and a string selection line (SSL). The channel extends in a first direction substantially perpendicular to a top surface of a substrate, and a thickness of the channel is different according to height. The GSL, the word lines and the SSL are sequentially formed on a sidewall of the channel in the first direction and spaced apart from each other.
Public/Granted literature
- US20120098048A1 VERTICAL MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME Public/Granted day:2012-04-26
Information query
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