Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13711673Application Date: 2012-12-12
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Publication No.: US08772862B2Publication Date: 2014-07-08
- Inventor: Heung-Jae Cho
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2012-0077772 20120717
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
A vertical channel transistor includes a pillar formed over a substrate, and a gate electrode formed on sidewalls of the pillar, wherein the pillar includes a source area, a vertical channel area over the source area, a drain area over the vertical channel area, and a leakage prevention area interposed between the vertical channel area and the drain area.
Public/Granted literature
- US20140021485A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2014-01-23
Information query
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