A nonvolatile semiconductor memory transistor included in a nonvolatile semiconductor memory includes an island-shaped semiconductor having a source region, a channel region, and a drain region formed in this order from the substrate side, a hollow pillar-shaped charge storage layer arranged so as to surround the outer periphery of the channel region in such a manner that a tunnel insulating film is interposed between the charge storage layer and the channel region, and a hollow pillar-shaped control gate arranged so as to surround the outer periphery of the charge storage layer in such a manner that an insulating film is interposed between the control gate and the charge storage layer. The insulating film is arranged so as to be interposed between the charge storage layer and the upper, lower, and inner side surfaces of the control gate.