Invention Grant
- Patent Title: MOS transistor structure
- Patent Title (中): MOS晶体管结构
-
Application No.: US13627912Application Date: 2012-09-26
-
Publication No.: US08772865B2Publication Date: 2014-07-08
- Inventor: Jeffrey Pearse , Prasad Venkatraman , James Sellers , Hemanshu D. Bhatt
- Applicant: Semiconductor Components Industries, LLC
- Applicant Address: US AZ Phoenix
- Assignee: Semiconductor Components Industries, LLC
- Current Assignee: Semiconductor Components Industries, LLC
- Current Assignee Address: US AZ Phoenix
- Agent Robert F. Hightower
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
In one embodiment, an MOS transistor is formed to have an active region and a termination region. Within the termination region a plurality of conductors are formed to make electrical contact to conductors that are within a plurality of trenches. The plurality of conductors in the termination region are formed to be substantially coplanar.
Public/Granted literature
- US20140084363A1 MOS TRANSISTOR STRUCTURE Public/Granted day:2014-03-27
Information query
IPC分类:
