Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12650436Application Date: 2009-12-30
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Publication No.: US08772866B2Publication Date: 2014-07-08
- Inventor: Sung Pyo Hong
- Applicant: Sung Pyo Hong
- Applicant Address: KR Icheon
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon
- Priority: KR10-2009-0069072 20090728
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
A semiconductor device comprises a buried gate formed by being buried under a surface of a semiconductor substrate, a dummy gate formed on the buried gate, and a landing plug formed on a junction region of the semiconductor substrate being adjacent to the dummy gate.
Public/Granted literature
- US20110024830A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2011-02-03
Information query
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