Invention Grant
- Patent Title: Semiconductor device and method of manufacturing semiconductor device
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13609643Application Date: 2012-09-11
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Publication No.: US08772882B2Publication Date: 2014-07-08
- Inventor: Kazuhiko Takada
- Applicant: Kazuhiko Takada
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2010-169183 20100728
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L23/532 ; H01L21/28 ; H01L27/115 ; H01L29/423 ; H01L29/788 ; H01L21/768
Abstract:
A conductive film having a first width in a first direction, an ONO film, and a control gate are formed above a tunnel gate insulating film. With the control gate as a mask, the conductive film is etched to form a floating gate. Then, an inter-layer insulating film is formed. A contact hole whose width in the first direction is larger than the first width is formed in the inter-layer insulating film. Then, sidewall spacer is formed on an inside wall of the contact hole.
Public/Granted literature
- US20130001670A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2013-01-03
Information query
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