Invention Grant
US08772886B2 Spin transfer torque magnetic random access memory (STTMRAM) having graded synthetic free layer
有权
具有分级合成自由层的自旋转移磁矩随机存取存储器（STTMRAM）
- Patent Title: Spin transfer torque magnetic random access memory (STTMRAM) having graded synthetic free layer
- Patent Title (中): 具有分级合成自由层的自旋转移磁矩随机存取存储器（STTMRAM）
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Application No.: US13099308Application Date: 2011-05-02
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Publication No.: US08772886B2Publication Date: 2014-07-08
- Inventor: Yiming Huai , Rajiv Yadav Ranjan , Ioan Tudosa , Roger Klas Malmhall , Yuchen Zhou
- Applicant: Yiming Huai , Rajiv Yadav Ranjan , Ioan Tudosa , Roger Klas Malmhall , Yuchen Zhou
- Applicant Address: US CA Fremont
- Assignee: Avalanche Technology, Inc.
- Current Assignee: Avalanche Technology, Inc.
- Current Assignee Address: US CA Fremont
- Agent Maryam Imam; Bing K Yen
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L43/10 ; H01F10/32 ; G11C11/16 ; B82Y25/00 ; H01L43/08 ; H01L43/02
Abstract:
A spin transfer torque memory random access memory (STTMRAM) element is capable of switching states when electrical current is applied thereto for storing data and includes the following layers. An anti-ferromagnetic layer, a fixed layer formed on top of the anti-ferromagnetic layer, a barrier layer formed on top of the second magnetic layer of the fixed layer, and a free layer including a first magnetic layer formed on top of the barrier layer, a second magnetic layer formed on top of the first magnetic layer, a non-magnetic insulating layer formed on top of the second magnetic layer and a third magnetic layer formed on top of the non-magnetic insulating layer. A capping layer is formed on top of the non-magnetic insulating layer.
Public/Granted literature
- US20120018823A1 SPIN TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY (STTMRAM) HAVING GRADED SYNTHETIC FREE LAYER Public/Granted day:2012-01-26
Information query
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