Invention Grant
US08772891B2 Lateral overflow drain and channel stop regions in image sensors
有权
图像传感器中的横向溢出漏极和通道停止区域
- Patent Title: Lateral overflow drain and channel stop regions in image sensors
- Patent Title (中): 图像传感器中的横向溢出漏极和通道停止区域
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Application No.: US12609257Application Date: 2009-10-30
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Publication No.: US08772891B2Publication Date: 2014-07-08
- Inventor: Edmund K. Banghart , Eric G. Stevens , Hung Q. Doan
- Applicant: Edmund K. Banghart , Eric G. Stevens , Hung Q. Doan
- Applicant Address: US NY Rochester
- Assignee: Truesense Imaging, Inc.
- Current Assignee: Truesense Imaging, Inc.
- Current Assignee Address: US NY Rochester
- Agency: Howard & Howard Attorneys PLLC
- Main IPC: H01L31/101
- IPC: H01L31/101 ; H01L27/146 ; H01L27/148
Abstract:
A lateral overflow drain and a channel stop are fabricated using a double mask process. Each lateral overflow drain is formed within a respective channel stop. Due to the use of two mask layers, one edge of each lateral overflow drain is aligned, or substantially aligned, with an edge of a respective channel stop.
Public/Granted literature
- US20100140728A1 LATERAL OVERFLOW DRAIN AND CHANNEL STOP REGIONS IN IMAGE SENSORS Public/Granted day:2010-06-10
Information query
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