Invention Grant
US08772894B2 Trench process and structure for backside contact solar cells with polysilicon doped regions 有权
具有多晶硅掺杂区域的背面接触太阳能电池的沟槽工艺和结构

Trench process and structure for backside contact solar cells with polysilicon doped regions
Abstract:
A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. A trench structure separates the P-type doped region from the N-type doped region. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. The trench structure may include a textured surface for increased solar radiation collection. Among other advantages, the resulting structure increases efficiency by providing isolation between adjacent P-type and N-type doped regions, thereby preventing recombination in a space charge region where the doped regions would have touched.
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