Invention Grant
US08772930B2 Increased surface area electrical contacts for microelectronic packages
有权
用于微电子封装的增加的表面积电触点
- Patent Title: Increased surface area electrical contacts for microelectronic packages
- Patent Title (中): 用于微电子封装的增加的表面积电触点
-
Application No.: US13354302Application Date: 2012-01-19
-
Publication No.: US08772930B2Publication Date: 2014-07-08
- Inventor: Pui Chung Simon Law , Dan Yang , Xunqing Shi
- Applicant: Pui Chung Simon Law , Dan Yang , Xunqing Shi
- Applicant Address: CN Hong Kong Science Park Shatin, New Territories, Hong Kong
- Assignee: Hong Kong Applied Science and Technology Research Institute Company Limited
- Current Assignee: Hong Kong Applied Science and Technology Research Institute Company Limited
- Current Assignee Address: CN Hong Kong Science Park Shatin, New Territories, Hong Kong
- Agency: Ella Cheong Hong Kong
- Agent Sam T. Yip
- Main IPC: H01L23/498
- IPC: H01L23/498

Abstract:
A multilayer microelectronic device package includes one or more vertical electrical contacts. At least one semiconductor material layer is provided having one or more electrical devices fabricated therein. An electrical contact pad can be formed on or in the semiconductor material layer. Another material layer is positioned adjacent to the semiconductor material layer and includes a conductive material stud embedded in or bonded to the layer. A via is formed through at least a portion of the semiconductor material layer and the electrical contact pad and into the adjacent layer conducting material stud. The via is constructed such that the via tip terminates within the conducting material stud, exposing the conducting material. A metallization layer is disposed in the via such that the metallization layer contacts both the electrical contact pad and the conducting material stud exposed by the via tip.
Public/Granted literature
- US20130187267A1 INCREASED SURFACE AREA ELECTRICAL CONTACTS FOR MICROELECTRONIC PACKAGES Public/Granted day:2013-07-25
Information query
IPC分类: