Invention Grant
- Patent Title: Aluminum interconnection apparatus
- Patent Title (中): 铝互连设备
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Application No.: US13596893Application Date: 2012-08-28
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Publication No.: US08772934B2Publication Date: 2014-07-08
- Inventor: Ching-Fu Yeh , Hsiang-Huan Lee
- Applicant: Ching-Fu Yeh , Hsiang-Huan Lee
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater and Matsil, L.L.P.
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L29/772
Abstract:
An aluminum interconnection apparatus comprises a metal structure formed over a substrate, wherein the metal structure is formed of a copper and aluminum alloy, a first alloy layer formed underneath the metal structure and a first barrier layer formed underneath the first alloy layer, wherein the first barrier layer is generated by a reaction between the first alloy layer and an adjacent dielectric layer during a thermal process.
Public/Granted literature
- US20140061913A1 Aluminum Interconnection Apparatus Public/Granted day:2014-03-06
Information query
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