Invention Grant
- Patent Title: Semiconductor device with a copper line and method for manufacturing the same
- Patent Title (中): 具有铜线的半导体器件及其制造方法
-
Application No.: US13607631Application Date: 2012-09-07
-
Publication No.: US08772936B2Publication Date: 2014-07-08
- Inventor: Hyung Jin Park
- Applicant: Hyung Jin Park
- Applicant Address: KR Icheon
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Icheon
- Priority: KR10-2012-0031097 20120327
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/48 ; H01L21/4763 ; H01L21/44 ; H01L21/768
Abstract:
A semiconductor device with a copper line comprises a lower portion of a copper pattern buried in an interlayer insulating film, an upper portion of the copper disposed over the upper portion of the lower copper pattern, and an upper barrier metal layer disposed over upper and side surfaces of the upper copper pattern. As a result, the copper pattern is protected by the barrier metal layers, providing a metal line with a stable structure.
Public/Granted literature
- US20130256891A1 SEMICONDUCTOR DEVICE WITH A COPPER LINE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2013-10-03
Information query
IPC分类:
