Invention Grant
- Patent Title: Semiconductor device including inner interconnection structure able to conduct signals or voltages in the semiconductor chip with vertical connection vias and horizontal buried conductive lines
- Patent Title (中): 半导体器件包括能够在垂直连接通孔和水平掩埋导电线路中在半导体芯片中传导信号或电压的内部互连结构
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Application No.: US13162775Application Date: 2011-06-17
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Publication No.: US08772937B2Publication Date: 2014-07-08
- Inventor: Hyun Chul Seo , Seung Yeop Lee
- Applicant: Hyun Chul Seo , Seung Yeop Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Patent Ltd.
- Priority: KR10-2010-0115038 20101118
- Main IPC: H01L23/48
- IPC: H01L23/48
Abstract:
A semiconductor device includes a semiconductor chip and an inner interconnection structure. The semiconductor chip includes a front surface that exposes first connection terminals and a rear surface that is opposite to the front surface and exposes second connection terminals separated from the first connection terminals. The inner interconnection structure includes horizontal buried conductive lines and vertical connection lines disposed to pierce the semiconductor chip to connect the first connection terminals and the second connection terminals.
Public/Granted literature
- US20120126373A1 SEMICONDUCTOR DEVICE INCLUDING INNER INTERCONNECTION STRUCTURE Public/Granted day:2012-05-24
Information query
IPC分类:
