Invention Grant
- Patent Title: Polishing systems and methods for removing conductive material from microelectronic substrates
- Patent Title (中): 用于从微电子基板去除导电材料的抛光系统和方法
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Application No.: US12185675Application Date: 2008-08-04
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Publication No.: US08772939B2Publication Date: 2014-07-08
- Inventor: Nishant Sinha
- Applicant: Nishant Sinha
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Perkins Coie LLP
- Main IPC: H01L23/532
- IPC: H01L23/532

Abstract:
Polishing systems and methods for removing conductive material (e.g., noble metals) from microelectronic substrates are disclosed herein. Several embodiments of the methods include forming an aperture in a substrate material, disposing a conductive material on the substrate material and in the aperture, and disposing a fill material on the conductive material. The fill material at least partially fills the aperture. The substrate material is then polished to remove at least a portion of the conductive material and the fill material external to the aperture during which the fill material substantially prevents the conductive material from smearing into the aperture during polishing the substrate material.
Public/Granted literature
- US20100025854A1 POLISHING SYSTEMS AND METHODS FOR REMOVING CONDUCTIVE MATERIAL FROM MICROELECTRONIC SUBSTRATES Public/Granted day:2010-02-04
Information query
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