Invention Grant
- Patent Title: Hall element control circuit
- Patent Title (中): 霍尔元件控制电路
-
Application No.: US13153013Application Date: 2011-06-03
-
Publication No.: US08773122B2Publication Date: 2014-07-08
- Inventor: Takeshi Kura , Hiroyuki Tsuda , Tomonori Kamiya , Hiroki Nagai
- Applicant: Takeshi Kura , Hiroyuki Tsuda , Tomonori Kamiya , Hiroki Nagai
- Applicant Address: US AZ Phoenix
- Assignee: Semiconductor Components Industries, LLC
- Current Assignee: Semiconductor Components Industries, LLC
- Current Assignee Address: US AZ Phoenix
- Priority: JP2010-127596 20100603
- Main IPC: G01R33/06
- IPC: G01R33/06

Abstract:
A first terminal supplies the bias voltage to a high-potential-side input terminal of a hall element. A second terminal supplies the ground potential to a low-potential-side input terminal of the hall element. A P-channel type transistor is configured such that the source terminal is connected to the power supply potential and the drain terminal is connected to the first terminal. An operational amplifier differentially amplifies the voltage between a predetermined set voltage and the voltage at the first terminal so as to control the gate voltage of the P-channel type transistor.
Public/Granted literature
- US20110298453A1 HALL ELEMENT CONTROL CIRCUIT Public/Granted day:2011-12-08
Information query