Invention Grant
- Patent Title: Overshoot suppression for input/output buffers
- Patent Title (中): 输入/输出缓冲区过冲抑制
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Application No.: US13688001Application Date: 2012-11-28
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Publication No.: US08773192B2Publication Date: 2014-07-08
- Inventor: Mark F. Turner , Jay Daugherty , Jeff S. Brown , Marek J. Marasch
- Applicant: LSI Corporation
- Applicant Address: US CA San Jose
- Assignee: LSI Corporation
- Current Assignee: LSI Corporation
- Current Assignee Address: US CA San Jose
- Agency: Cochran Freund & Young LLC
- Agent William W. Cochran
- Main IPC: H03L5/00
- IPC: H03L5/00

Abstract:
Disclosed is a diode clamping circuit that is used in an I/O buffer to suppress noise. Diode-connected CMOS transistors or PN junction transistors are utilized, which are native to the CMOS process. Switching circuitry is also disclosed to isolate the diodes and prevent current drain in the circuit. Switching circuitry is also used to switch between two different power supply voltages.
Public/Granted literature
- US20140145775A1 OVERSHOOT SUPPRESSION FOR INPUT/OUTPUT BUFFERS Public/Granted day:2014-05-29
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