Invention Grant
- Patent Title: Power amplifier apparatus and power amplifier circuit
- Patent Title (中): 功率放大器和功率放大器电路
-
Application No.: US13521132Application Date: 2011-10-27
-
Publication No.: US08773206B2Publication Date: 2014-07-08
- Inventor: Huazhang Chen , Xiaojun Cui , Jianli Liu
- Applicant: Huazhang Chen , Xiaojun Cui , Jianli Liu
- Applicant Address: CN Shenzhen, Guangdong Province
- Assignee: ZTE Corporation
- Current Assignee: ZTE Corporation
- Current Assignee Address: CN Shenzhen, Guangdong Province
- Agency: Ling and Yang Intellectual Property LLC
- Agent Ling Wu; Stephen Yang
- Priority: CN201110111402 20110429
- International Application: PCT/CN2011/081395 WO 20111027
- International Announcement: WO2012/146006 WO 20121101
- Main IPC: H03F3/21
- IPC: H03F3/21 ; H03F3/195 ; H03F3/24 ; H03F1/02 ; H03F3/60

Abstract:
The present invention relates to a power amplifier apparatus and a power amplifier circuit thereof, the power amplifier circuit uses Doherty circuit structure, and it uses a high voltage heterojunction bipolor transistor (HVHBT) power amplifier to achieve a Carrier amplifier with the Doherty circuit structure, and uses a high electron mobility transistor (HEMT) power amplifier to achieve a Peak amplifier with the Doherty circuit structure. The power amplifier apparatus and a power amplifier circuit thereof in the present invention improves the efficiency of the power amplifier.
Public/Granted literature
- US20140035680A1 Power Amplifier Apparatus and Power Amplifier Circuit Public/Granted day:2014-02-06
Information query
IPC分类: