Invention Grant
US08773886B2 Memory array with co-planar waveguide based memory element selection
有权
具有共面波导的存储器阵列存储元件选择
- Patent Title: Memory array with co-planar waveguide based memory element selection
- Patent Title (中): 具有共面波导的存储器阵列存储元件选择
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Application No.: US13213412Application Date: 2011-08-19
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Publication No.: US08773886B2Publication Date: 2014-07-08
- Inventor: Wei Wu , John Paul Strachan , Antonio Carlos Torrezan de Sousa
- Applicant: Wei Wu , John Paul Strachan , Antonio Carlos Torrezan de Sousa
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
A memory array with co-planar waveguide based memory selection includes a first set of parallel conductive lines placed perpendicular to a second set of parallel conductive lines, memory elements disposed at intersections between the first set of conductive lines and the second set of conductive lines, and selection circuitry to apply an reading electrical condition to a selected one of the conductive lines and to ground conductive lines adjacent to the selected conductive line to form a co-planar waveguide.
Public/Granted literature
- US20130044533A1 MEMORY ARRAY WITH CO-PLANAR WAVEGUIDE BASED MEMORY ELEMENT SELECTION Public/Granted day:2013-02-21
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