A writing circuit for a magnetoresistive memory cell is provided. The writing circuit includes a first electrical connecting terminal, a second electrical connecting terminal, a third electrical connecting terminal, a fourth electrical connecting terminal, a first reference potential terminal, a second reference potential terminal, a first switch configured to couple one of the first electrical connecting terminal, the second electrical connecting terminal, the third electrical connecting terminal and the fourth electrical connecting terminal to the magnetoresistive memory cell, and a second switch configured to couple the first reference potential terminal to the magnetoresistive memory cell if the first electrical connecting terminal or the second electrical connecting terminal is coupled to the magnetoresistive memory cell, and to couple the second reference potential terminal to the magnetoresistive memory cell if the third electrical connecting terminal or the fourth electrical connecting terminal is coupled to the magnetoresistive memory cell.